Application fields
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Materials Science (Surface potential mapping, work function measurements, defect detection, thin film analysis)
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Semiconductors (Doping profiling, device characterization, failure analysis, nanoscale electronics)
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2D Materials (Layer identification, electronic property mapping, substrate interaction studies, defect analysis)
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Polymers (Charge distribution mapping, blend differentiation, aging studies, nanoscale polymer electronics)
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Life Sciences (Biomaterial characterization, cell membrane charge mapping, protein/DNA charge analysis, bioelectronics)
HD-KFM III
The Most Advanced Single-Pass KFM Mode
HD-KFM III™ represents the cutting edge of Kelvin Probe Force Microscopy (KFM) technology. This advanced module for the Nano-Observer II AFM offers unparalleled sensitivity and resolution in single-pass mode, revolutionizing surface potential measurements at the nanoscale.
Key Features
dC/dZ Measurements: dC/dZ measures the change in capacitance with respect to the tip-sample distance, providing information about local dielectric properties.
Benefits: Enables mapping of dielectric constants and investigation of thin film properties at the nanoscale.
EFC (Electrical Field Compensation for MFM):
EFC nullifies the electrostatic interaction between the tip and sample during Magnetic Force Microscopy measurements.
Benefits: Allows for pure magnetic measurements without electrostatic interference, crucial for accurate characterization of magnetic nanostructures.
Lift Mode:
An optional mode where the tip is lifted to a specific height above the surface after recording topography, then used for potential measurement. Benefits: Useful for samples with large height variations or when separating long-range electrostatic forces from short-range forces is necessary.
These advanced features expand the capabilities of HD-KFM III, making it a versatile tool for a wide range of nanoscale electrical characterization needs.