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Application fields
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Micro-Electronics
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Nano-Materials
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Doping Profiles
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Biomedical Applications
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Green Energy
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Photonic Materials and Devices
Scanning Microwave Impedance Microscopy (sMIM)
Achieve Unmatched Electrical Property Mapping at the Nanoscale
Scanning Microwave Impedance Microscopy (sMIM) is a revolutionary AFM mode developed by PrimeNano and integrated with CSInstruments' Nano-Observer II. This cutting-edge technique offers high-quality images of local electrical properties with better than 50 nm resolution, utilizing microwave reflections from a nanoscale region directly under the sMIM probe.
Key Features
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Versatile Material Sensitivity: Accurately measure metals, semiconductors, insulators, and dielectrics
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Direct Measurement: Conductivity (σ) and permittivity (ε) measured directly at the nanoscale
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Linear Relationship: Ensures accurate data with a linear relationship to electrical properties
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Quantitative Mapping: Capable of quantitative doping concentration mapping
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Nano-Scale C-V Spectra: Offers detailed capacitance-voltage spectra at the nanoscale
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Sub-Surface Sensing: Image structures beneath the sample surface
Advanced Capabilities of sMIM
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Unprecedented Sensitivity: Highest sensitivity for imaging challenging materials
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Multiple Data Channels: Single scan provides six channels of data:
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sMIM-C: Capacitance/Permittivity variation
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sMIM-R: Resistivity/Conductivity variation
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dC/dV Amplitude: Carrier concentration
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dC/dV Phase: Carrier type (+/-)
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dR/dV Amplitude: Carrier concentration
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dR/dV Phase: Carrier type (+/-)
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Minimal Sample Preparation: Reduces prep time, no need for conductive paths or current flow
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Versatile Imaging Modes: Use in both contact and non-contact modes
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User-Friendly Software: Easy scan management and configuration
Check the
Nano-Observer II page for more details about the modes
In this scan result, we analyze a sample of static random-access memory (sRAM) using Scanning Microwave Impedance Microscopy (sMIM) mode over a 13 micrometer area. The scan simultaneously captures topography and differential capacitance (dC/dV) signals.
The sMIM probes are MEMS devices with a shielded front and back, and a center transmission line to reduce environmental interference. With a 50nm radius, they optimize signal strength and resolution. The probe interface, a "leaky capacitor," creates an impedance mismatch, producing reflections. As the probe moves, changes in impedance generate real and imaginary signals, which are digitized to create sMIM-C and sMIM-R images, synchronized with topography. Contact us for sMIM probes now.